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SIEGET(R) 25
NPN Silicon RF Transistor * For high gain low noise amplifiers * For oscillators up to 10 GHz * Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz * Transition frequency f T = 25 GHz * Gold metalization for high reliability * SIEGET (R) 25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line
BFP 420
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP 420
Marking Ordering Code AMs Q62702-F1591
Pin Configuration 1=B 2=E 3=C 4=E
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S 107 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Symbol Value 4.5 15 1.5 35 3 160 150 -65 ...+150 -65 ...+150 mW C mA Unit V
VCEO VCBO VEBO IC IB Ptot Tj TA T stg
1)
Junction - soldering point
RthJS
270
K/W
1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11
Jul-14-1998 1998-11-01
BFP 420
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 20 mA, VCE = 4 V typ. 5 80 max. 6.5 200 35 150 V nA A -
Unit
V(BR)CEO I CBO I EBO hFE
4.5 50
AC characteristics Transition frequency IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 Third order intersept point IC = 20 mA, VCE = 2 V, ZS =ZSopt , ZL=ZLopt , f = 1.8 GHz 1dB Compression point IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt
fT Ccb Cce Ceb F
20 -
25 0.15 0.41 0.55 1.05
0.24 1.4
GHz pF
dB
Gms
-
20
-
|S21|2
14
17
-
dB
IP3
-
22
-
dBm
P-1dB
-
12
-
1) Gms = |S21 / S12| Semiconductor Group Semiconductor Group 22
Jul-14-1998 1998-11-01
BFP 420
Common Emitter S-Parameters
f
GHz MAG
S11
ANG MAG
S21
ANG MAG
S12
ANG MAG
S22
ANG
VCE = 2V, IC = 20mA
0.01 0.1 0.5 1 2 3 4 6 8 9 10 0.543 0.538 0.448 0.417 0.437 0.472 0.53 0.617 0.73 0.788 0.82
-2.5 -25.1 -99.3 -143.6 176.2 152.8 133.3 109.1 82.5 72.6 67
36.88 35.4 22.87 13.46 6.93 4.59 3.339 2.15 1.46 1.2 1
178.1 164.4 120.8 96.3 71.5 54.4 38.9 12.9 -16.8 -30.4 -39.5
0.0009 0.0075 0.0272 0.0398 0.062 0.09 0.115 0.156 0.172 0.174 0.172
95.8 79.3 58.7 55.2 53.5 48.6 40.5 25.3 5.4 -5 -11.3
0.96 0.946 0.633 0.399 0.227 0.134 0.109 0.136 0.229 0.319 0.405
-0.6 -12.3 -45.2 -60.3 -77.1 -96.7 -144.5 144.1 101.3 86.1 78.6
Common Emitter Noise Parameters
f
GHz
Fmin 1)
dB
Ga 1)
dB
opt
MAG ANG
RN
rn
-
F50 2)
dB
|S21|2 2)
dB
V CE = 2V, IC = 5mA
0.9 1.8 2.4 3 4 5 6 0.9 1.05 1.25 1.38 1.55 1.75 2.2 20.5 15.2 13 12.1 10.3 8.6 6.4 0.19 0.11 0.11 0.19 0.28 0.37 0.44 30 64 116 165 -155 -130 -117 8.7 7.5 7 6.5 7 10 15 0.17 0.15 0.14 0.13 0.14 0.2 0.3 1.02 1.11 1.32 1.48 1.83 2.2 3.3 20.3 15.8 13.5 11.6 9.1 7 5.3
1) Input matched for minimum noise figure, output for maximum gain
2) Z S = ZL = 50
For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 33
Jul-14-1998 1998-11-01
BFP 420
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data
IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI =
0.20045 28.383 2.0518 19.705 1.1724 8.5757 1.8063 6.7661 1 0.81969 2.3249 0 3
aA V V fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
72.534 0.48731 7.8287 0.69141 3.4849 0.31111 0.8051 0.42199 0 0.30232 0 0 0.73234
A A V deg F -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
1.2432 19.049 1.3325 0.019237 0.72983 0.10105 0.46576 0.23794 234.53 0.3 0.75 1.11 300
pA A mA V fF V eV K
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
3.5
fA
N=
1.02
-
RS =
10
All parameters are ready to use, no scalling is necessary
Package Equivalent Circuit:
C CB
L BI = L BO = L EI =
C C'-E'Diode
0.47 0.53 0.23 0.05 0.56 0.58 136 6.9 134
nH nH nH nH nH nH fF fF fF
L BO
B
L BI
B'
Transistor Chip E'
C'
L CI
L CO
L EO = L CI = L CO = C BE = C CB = C CE =
C BE L EI
C CE
L EO
E
EHA07389
Valid up to 6GHz
The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitentechnik (IMST) (c) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44
Jul-14-1998 1998-11-01
BFP 420
For non-linear simulation: * Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. * If you need simulation of thereverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. * Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: * This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation.
C B
E
E
EHA07307
Transistor Schematic Diagram
The common emitter configuration shows the following advantages: * Higher gain because of lower emitter inductance. * Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling.
Semiconductor Group Semiconductor Group
55
Jul-14-1998 1998-11-01
BFP 420
Total power dissipation P tot = f (T A*, TS)
* Package mounted on epoxy
Transition frequency fT = f (IC)
f = 2 GHz VCE = parameter in V
200
mW
30 GHz
2 to 4 1.5
160
24
Ptot
140
fT TS
120 100 80 60 40 20 0 0
1 0.75
22 20 18
TA
16 14 12 10 8 6 4 2
0.5
20
40
60
80
100
120 C
150
0 0
5
10
15
20
25
30
mA
40
TA,TS
IC
Permissible Pulse Load R thJS = f (tp)
Permissible Pulse Load
Ptotmax/P totDC = f (tp)
10 3 10 1
K/W
RthJS
Pmax / PDC
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
-
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Semiconductor Group Semiconductor Group
66
Jul-14-1998 1998-11-01
BFP 420
Power gain G ma, G ms, |S 21|2 = f ( f ) VCE = 2V, I C = 20 mA
44
dB
Power gain Gma, Gms = f (I C)
VCE = 2V f = parameter in GHz
30 dB
0.9
36
24
G
32 28 24 20 16 12 8 4 0 0.0 1.0 2.0 3.0 4.0
GHz
G Gms
22 20 18 16 14 12
1.8
2.4 3 4 5 6
|S21 |2
Gma
10 8 6 4 2 6.0 0 0 4 8 12 16 20 24 28
32 mA
40
f
IC
Power gain G ma, G ms = f (V CE) I C = 20 mA
Collector-base capacitance Ccb = f (VCB) VBE = 0, f = 1MHz
0.30
f = parameter in GHz
30 dB
0.9
pF
24
G
22 20 18 16 14 12 10 8 6
1.8 2.4 3
Ccb
0.20
0.15
4 5 6
0.10
0.05 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
4.5
0.00 0
1
2
V
4
VCE
VCB
Semiconductor Group Semiconductor Group
77
Jul-14-1998 1998-11-01
BFP 420
Noise figure F = f (IC)
Noise figure F = f (IC)
VCE = 2 V, ZS = Z Sopt
4.0
dB
VCE = 2 V, f = 1.8 GHz
3.0
dB
3.0 2.0
F
2.0
F
1.5
2.5
1.5
ZS = 50 Ohm ZS = ZSopt f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz
4 8 12 16 20 24 28 32 mA 38 1.0
1.0
0.5
0.5
0.0 0
0.0 0
4
8
12
16
20
24
28 mA
36
IC
IC
Noise figure F = f ( f )
Source impedance for min. Noise Figure versus Frequency
VCE = 2 V, ZS = Z Sopt
3.0
VCE = 2 V, I C = 5 mA / 20 mA
+j50
dB
+j25
+j100
+j10 2.0
2.4GHz
F
1.8GHz 0.9GHz
3GHz
1.5
0
10
25
4GHz
50
100
0.45GHz
1.0
5GHz
IC = 20 mA IC = 5 mA
0.5
-j10
6GHz
-j25 -j50
-j100
0.0 0.0
1.0
2.0
3.0
4.0
GHz
6.0
f
Semiconductor Group Semiconductor Group
88
Jul-14-1998 1998-11-01

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